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[PS-14-04] Comparisons of Hot-carrier Effects of Scaled N-Channel and P-Channel Thin-Film SOI Power MOSFETs under Constant Drain Electric Field

^○K. Ikeno¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-14-04