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[PS-14-07] Ohmic Contact on N-type and P-type Ion-implanted 4H-SiC with Low-temperature Silicide-less Process

^○H. Shimizu¹, A. Shima¹, Y. Shimamoto¹ (1.Hitachi, Ltd.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-14-07