Impact of Optical Phonon Scattering on Inversion Channel Mobility in 4-<i>H</i>-SiC Trenched MOSFETs

K. Kutsuki

doi:https://doi.org/10.7567/SSDM.2016.PS-14-14L

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

15:00 〜 17:00

[PS-14-14(Late News)] Impact of Optical Phonon Scattering on Inversion Channel Mobility in 4-H-SiC Trenched MOSFETs

^○K. Kutsuki^1,2, S. Kawaji¹, Y. Watanabe¹, T. Onishi², H. Fujiwara², K. Yamamoto³, T. Yamamoto³ (1.Toyota Central R&D Labs. Inc.(Japan), 2.TOYOTA MOTOR Corp.(Japan), 3.DENSO Corp.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-14-14L

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