15:00 〜 17:00

[PS-14-16(Late News)] Effect of N Bonding Structure in AlON on Leakage Current of 4H-SiC MOS Capacitor

^○W. Takeuchi¹, K. Yamamoto², T. Mimura², M. Sakashita¹, T. Kanemura², O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ.(Japan), 2.DENSO Corp.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-14-16L