A Surface-Potential-Based Reverse-Transfer Capacitance Model for Vertical SiC DMOSFET

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

11:21 AM - 11:24 AM

^○M. Shintani¹, Y. Nakamura¹, M. Hiromoto¹, T. Hikihara¹, T. Sato¹ (1.Kyoto Univ.(Japan))