Effect of N Bonding Structure in AlON on Leakage Current of 4H-SiC MOS Capacitor

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

11:45 AM - 11:48 AM

^○W. Takeuchi¹, K. Yamamoto², T. Mimura², M. Sakashita¹, T. Kanemura², O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ.(Japan), 2.DENSO Corp.(Japan))