Growth of Heavily Doped <i>n</i>-Ge Epitaxial Layer by <i>In situ</i> Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition

S. Ike

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

11:03 〜 11:06

[PS-1-02] Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition

^○S. Ike^1,2, W. Takeuchi¹, O. Nakatsuka¹, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan))

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