Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implamted (100) Oriented Thin SOI Wafers

K. Furukawa

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

11:06 〜 11:09

[PS-1-03] Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implamted (100) Oriented Thin SOI Wafers

^○K. Furukawa¹, A. Teramoto¹, R. Kuroda¹, T. Suwa¹, K. Hashimoto¹, S. Sugawa¹, D. Suzuki², Y. Chiba², K. Ishii², A. Shimizu², K. Hasebe² (1.Tohoku Univ.(Japan), 2.Tokyo Electron Tohoku Ltd.(Japan))

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