11:06 AM - 11:09 AM
[PS-1-03] Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implamted (100) Oriented Thin SOI Wafers
○K. Furukawa1, A. Teramoto1, R. Kuroda1, T. Suwa1, K. Hashimoto1, S. Sugawa1, D. Suzuki2, Y. Chiba2, K. Ishii2, A. Shimizu2, K. Hasebe2
(1.Tohoku Univ.(Japan), 2.Tokyo Electron Tohoku Ltd.(Japan))