Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

D. Zhai

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

11:12 〜 11:15

[PS-1-05] Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

^○D. Zhai¹, J. Jiang^1,2, J. Li¹, X. Yu¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ.(China), 2.The:51th Res. Inst. of China Electronics Tech. Group Corp.(China))

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