Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

D. Zhai

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

11:12 AM - 11:15 AM

[PS-1-05] Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

^○D. Zhai¹, J. Jiang^1,2, J. Li¹, X. Yu¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ.(China), 2.The:51th Res. Inst. of China Electronics Tech. Group Corp.(China))

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