Enhanced Electrical and Reliability Characteristics in Ge p-MOSFETs by In-situ Plasma Treatments and Capping Hf/Zr on Interfacial Layers

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

11:21 〜 11:24

^○T. Huang¹, C. Hsu¹, K. S. Chang-Liao¹, Y. Hsu¹, C. Huang¹, Y. Li¹ (1.National Tsing Hua Univ.(Taiwan))