Enhanced Electrical and Reliability Characteristics in Ge p-MOSFETs by In-situ Plasma Treatments and Capping Hf/Zr on Interfacial Layers

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

11:21 AM - 11:24 AM

^○T. Huang¹, C. Hsu¹, K. S. Chang-Liao¹, Y. Hsu¹, C. Huang¹, Y. Li¹ (1.National Tsing Hua Univ.(Taiwan))