Novel GeO<sub>x</sub> Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation

K. Shiraga

11:24 〜 11:27

[PS-1-09] Novel GeO_x Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation

^○K. Shiraga¹, J. Miyahara², G. Nakamura¹, Y. Fujino¹, K. Akiyama¹, K. Tapily³, T. Harada¹, E. Hara¹, A. Tanihara¹, N. Yamamoto¹, Y. Hirota¹, T. Kaitsuka¹, T. Morimoto¹, K. Hasebe¹ (1.Tokyo Electron Ltd.(Japan), 2.Tokyo Electron Yamanashi Ltd.(Japan), 3.TEL Technology Center(USA))

2016 International Conference on Solid State Devices and Materials

[PS-1-09] Novel GeOx Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation

[PS-1-09] Novel GeO_x Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation