11:36 〜 11:39

[PS-1-13(Late News)] Heavy Sb-doping for Poly-GeSn on Insulator Using Pulsed Laser Annealing in Water

^○K. Takahashi^1,2, M. Kurosawa^1,3,4, H. Ikenoue⁵, M. Sakashita¹, O. Nakatsuka¹, S. Zaima^1,3 (1.Grad. Sch. of Engineering, Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan), 4.JST-PRESTO(Japan), 5.Kyushu Univ.(Japan))