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[PS-3-01] Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation

^○J. Lee¹, Y. Cho¹, S. Cho¹ (1.Gachon Univ.(Korea))

https://doi.org/10.7567/SSDM.2016.PS-3-01