Performance Comparison of Si, In<sub>0.53</sub>Ga<sub>0.47</sub>As and GaSb 10-nm Double Gate nMOSFETs by Deterministically Solving Time Dependent BTE

3:00 PM - 5:00 PM

[PS-3-05] Performance Comparison of Si, In_0.53Ga_0.47As and GaSb 10-nm Double Gate nMOSFETs by Deterministically Solving Time Dependent BTE

^○S. Di¹, L. Shen¹, Z. Lun¹, P. Chang¹, K. Zhao^1,2, T. Lu¹, G. Du¹, X. Liu¹ (1.Peking Univ.(China), 2.Beijing Info. Sci. and Tech. Univ.(China))