The Japan Society of Applied Physics

3:00 PM - 5:00 PM

[PS-3-06] Temperature and Doping Concentration Dependence Characteristics in Junctionless Gate-all-Around Polycrystalline Silicon Thin-Film-Transistors

C. T. Tso1, T. Y. Liu1, F. M. Pan1, J. T. Sheu1 (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-3-06