The Japan Society of Applied Physics

3:00 PM - 5:00 PM

[PS-3-12] Study on ON-Resistance Degradation Modeling Used for HCI Induced Degradation Characteristic of LDMOS Transistors

M. Higashino1, H. Aoki1, N. Tsukiji1, M. Kazumi1, T. Totsuka1, S. Shibuya1, K. Kurihara1, H. Kobayashi1 (1.Gunma Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-3-12