3:00 PM - 5:00 PM
[PS-3-12] Study on ON-Resistance Degradation Modeling Used for HCI Induced Degradation Characteristic of LDMOS Transistors
○M. Higashino1, H. Aoki1, N. Tsukiji1, M. Kazumi1, T. Totsuka1, S. Shibuya1, K. Kurihara1, H. Kobayashi1
(1.Gunma Univ.(Japan))
https://doi.org/10.7567/SSDM.2016.PS-3-12