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[PS-3-12] Study on ON-Resistance Degradation Modeling Used for HCI Induced Degradation Characteristic of LDMOS Transistors

^○M. Higashino¹, H. Aoki¹, N. Tsukiji¹, M. Kazumi¹, T. Totsuka¹, S. Shibuya¹, K. Kurihara¹, H. Kobayashi¹ (1.Gunma Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-3-12