3:00 PM - 5:00 PM

[PS-3-13(Late News)] Multilayer TiNi Alloys as Gate Metal for InGaAs MOS Devices

H. Do¹, Q. Luc¹, M. Huu Ha¹, S. Huynh¹, C. Chang¹, J. Lin¹,^○K. Yang¹, C. FanChang¹, Y. Lin¹, E. Chang¹ (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-3-13L