The Japan Society of Applied Physics

11:06 〜 11:09

[PS-3-03] Influence of Line-Edge Roughness (LER) on Multiple-Gate (MG) Tunnel Field-Effect Transistors (TFETs)

W. Y. Choi1, S. H. Choi1, J. W. Lee1, I. Huh1 (1.Sogang Univ.(Korea))