11:12 〜 11:15
[PS-3-05] Performance Comparison of Si, In0.53Ga0.47As and GaSb 10-nm Double Gate nMOSFETs by Deterministically Solving Time Dependent BTE
○S. Di1, L. Shen1, Z. Lun1, P. Chang1, K. Zhao1,2, T. Lu1, G. Du1, X. Liu1
(1.Peking Univ.(China), 2.Beijing Info. Sci. and Tech. Univ.(China))