Study on ON-Resistance Degradation Modeling Used for HCI Induced Degradation Characteristic of LDMOS Transistors

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

11:33 AM - 11:36 AM

^○M. Higashino¹, H. Aoki¹, N. Tsukiji¹, M. Kazumi¹, T. Totsuka¹, S. Shibuya¹, K. Kurihara¹, H. Kobayashi¹ (1.Gunma Univ.(Japan))