The Japan Society of Applied Physics

2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日 〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

11:33 〜 11:36

[PS-3-12] Study on ON-Resistance Degradation Modeling Used for HCI Induced Degradation Characteristic of LDMOS Transistors

○M. Higashino1, H. Aoki1, N. Tsukiji1, M. Kazumi1, T. Totsuka1, S. Shibuya1, K. Kurihara1, H. Kobayashi1 (1.Gunma Univ.(Japan))