Multilayer TiNi Alloys as Gate Metal for InGaAs MOS Devices

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

11:36 AM - 11:39 AM

H. Do¹, Q. Luc¹, M. Huu Ha¹, S. Huynh¹, C. Chang¹, J. Lin¹,^○K. Yang¹, C. FanChang¹, Y. Lin¹, E. Chang¹ (1.NCTU(Taiwan))