15:00 〜 17:00

[PS-4-01] Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device with Ge Buried Channel

^○C. Cheng¹, K. S. Chang-Liao¹, H. Fang¹, C. Huang¹ (1.National Tsing Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-4-01