15:00 〜 17:00

[PS-4-06] SiCOH Low-k material based RRAM for BEOL Process Compatible Nonvolatile Memory Application

^○L. Zheng¹, Y. Dai¹, L. Yu¹, L. Chen¹, Q. Sun¹, S. Ding¹, W. Zhang¹ (1.Fudan Univ.(China))

https://doi.org/10.7567/SSDM.2016.PS-4-06