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[PS-4-07] Enhanced Retention Characteristics in Double Gate Tunnel FET based DRAM

^○N. Navlakha¹, J. T. Lin², A. Kranti¹ (1.Indian Inst. of Tech. Indore(India), 2.National Sun Yat-Sen Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-4-07