15:00 〜 17:00

[PS-4-09(Late News)] Improvement of Switching Endurance of Conducting-Bridge Random Access Memory by Addition of Metal Ion-Containing Ionic Liquid

^○K. Kinoshita¹, A. Harada¹, H. Yamaoka¹, A. Sakaguchi¹, K. Watanabe¹, S. Kishida¹, Y. Fukaya¹, T. Nokami¹, T. Itoh¹ (1.Tottori Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-4-09L