11:24 〜 11:27

[PS-4-09(Late News)] Improvement of Switching Endurance of Conducting-Bridge Random Access Memory by Addition of Metal Ion-Containing Ionic Liquid

^○K. Kinoshita¹, A. Harada¹, H. Yamaoka¹, A. Sakaguchi¹, K. Watanabe¹, S. Kishida¹, Y. Fukaya¹, T. Nokami¹, T. Itoh¹ (1.Tottori Univ.(Japan))