15:00 〜 17:00
[PS-6-01] InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH3 Post Remote-Plasma Treatment
P. C. Chang1, Q. H. Luc1, G. Y. Lin1,○C. C. Chang1, J. W. Lin1, C. C. Fan Chang1, K. S. Yang1, Y. C. Lin1, S. M. Sze1, E. Y. Chang1
(1.NCTU(Taiwan))
https://doi.org/10.7567/SSDM.2016.PS-6-01
