3:00 PM - 5:00 PM

[PS-6-01] InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH₃ Post Remote-Plasma Treatment

P. C. Chang¹, Q. H. Luc¹, G. Y. Lin¹,^○C. C. Chang¹, J. W. Lin¹, C. C. Fan Chang¹, K. S. Yang¹, Y. C. Lin¹, S. M. Sze¹, E. Y. Chang¹ (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-6-01