The Japan Society of Applied Physics

15:00 〜 17:00

[PS-6-01] InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH3 Post Remote-Plasma Treatment

P. C. Chang1, Q. H. Luc1, G. Y. Lin1,C. C. Chang1, J. W. Lin1, C. C. Fan Chang1, K. S. Yang1, Y. C. Lin1, S. M. Sze1, E. Y. Chang1 (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-6-01