15:00 〜 17:00

[PS-6-02] Deposition Temperature and Al₂O₃ Thickness Dependence on the Mobility of HfO₂/Al₂O₃/InGaAs Gate Stacks

^○K. Ohsawa¹, N. Kise¹, Y. Miyamoto¹ (1.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2016.PS-6-02