3:00 PM - 5:00 PM

[PS-6-03] Equivalent Oxide Thickness Self-Reduction and Work Function Self-Alignment Using Ti/AlN Doping Layer for Mo/HfO₂/InGaAs NMOS

^○H. Do¹, Q. Luc¹, M. Ha¹, S. Huynh¹, C. Chang¹, J. Lin¹, K. Yang¹, C. Chang¹, Y. Lin¹, E. Chang¹ (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-6-03