The Japan Society of Applied Physics

15:00 〜 17:00

[PS-6-03] Equivalent Oxide Thickness Self-Reduction and Work Function Self-Alignment Using Ti/AlN Doping Layer for Mo/HfO2/InGaAs NMOS

H. Do1, Q. Luc1, M. Ha1, S. Huynh1, C. Chang1, J. Lin1, K. Yang1, C. Chang1, Y. Lin1, E. Chang1 (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-6-03