Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations

B. Y. Chen

doi:https://doi.org/10.7567/SSDM.2016.PS-6-05

15:00 〜 17:00

[PS-6-05] Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations

B. Y. Chen^1,2,^○C. L. Chu¹, J. L. Chen³, G. L. Luo¹, T. T. Li⁴, E. Y. Chang² (1.National Nano Device Labs.(Taiwan), 2.NCTU(Taiwan), 3.I-Shou Univ.(Taiwan), 4.National Central Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-6-05

2016 International Conference on Solid State Devices and Materials

[PS-6-05] Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations