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[PS-6-08] Leakage Current Reduction of Gated Ohmic Anode AlGaN/GaN Schottky Barrier Dioide by Applying Anode Edge Termination

^○R. Ki¹, I. Hwang¹, H. Cha², K. Seo¹ (1.Seoul National Univ.(Korea), 2.Hongik Univ.(Korea))

https://doi.org/10.7567/SSDM.2016.PS-6-08