Hydrazine (N<sub>2</sub>H<sub>4</sub>)-based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with a High Quality Interface

H. Jung

doi:https://doi.org/10.7567/SSDM.2016.PS-6-14L

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

15:00 〜 17:00

[PS-6-14(Late News)] Hydrazine (N₂H₄)-based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with a High Quality Interface

^○H. Jung¹, M. Shin¹, H. Ahn¹, J. Do¹, S. Chang¹, K. Cho¹, B. Min¹, H. Kim¹, H. Yoon¹, J. Lim¹ (1.Electronics and Telecommunications Res. Inst.(Korea))

https://doi.org/10.7567/SSDM.2016.PS-6-14L

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2016 International Conference on Solid State Devices and Materials

[PS-6-14(Late News)] Hydrazine (N2H4)-based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with a High Quality Interface

[PS-6-14(Late News)] Hydrazine (N₂H₄)-based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with a High Quality Interface