The Japan Society of Applied Physics

2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日 〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

11:03 〜 11:06

[PS-6-02] Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks

○K. Ohsawa1, N. Kise1, Y. Miyamoto1 (1.Tokyo Tech(Japan))