The Japan Society of Applied Physics

2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日 〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

11:09 〜 11:12

[PS-6-04] Effect of Interface Traps on the Device Performances of the Tunneling Field-Effect Transistors Based on InGaAs

○R. H. Kwon1, Y. J. Yoon1, J. H. Seo1, Y. I. Jang1, M. S. Jo1, J. -H. Lee1, I. M. Kang1 (1.Kyungpook National Univ.(Korea))