11:15 AM - 11:18 AM

[PS-6-06] The Study of GaN-based Fin-HEMT with Low Current Collapse Phenomenon by Plasma Enhanced Atomic Layer Deposition

^○A. Tzou¹, S. Chen², Z. Li³, C. Chang¹, H. Kuo^1,2 (1.NCTU(Taiwan), 2.National Nano Device Labs.(Taiwan), 3.Epistar(Taiwan))