11:15 〜 11:18 [PS-6-06] The Study of GaN-based Fin-HEMT with Low Current Collapse Phenomenon by Plasma Enhanced Atomic Layer Deposition ○A. Tzou1, S. Chen2, Z. Li3, C. Chang1, H. Kuo1,2 (1.NCTU(Taiwan), 2.National Nano Device Labs.(Taiwan), 3.Epistar(Taiwan))
