11:21 〜 11:24 [PS-6-08] Leakage Current Reduction of Gated Ohmic Anode AlGaN/GaN Schottky Barrier Dioide by Applying Anode Edge Termination ○R. Ki1, I. Hwang1, H. Cha2, K. Seo1 (1.Seoul National Univ.(Korea), 2.Hongik Univ.(Korea))
