11:21 AM - 11:24 AM

[PS-6-08] Leakage Current Reduction of Gated Ohmic Anode AlGaN/GaN Schottky Barrier Dioide by Applying Anode Edge Termination

^○R. Ki¹, I. Hwang¹, H. Cha², K. Seo¹ (1.Seoul National Univ.(Korea), 2.Hongik Univ.(Korea))