The Japan Society of Applied Physics

11:24 AM - 11:27 AM

[PS-6-09] The Influence of AlGaN/GaN Schottky Barrier Diode (SBD) with SiH4 Doping in Barrier Layer

J. W. Chiu1, S. C. Chen1, B. H. Li1, H. C. Chiu1, R. Xuan2, C. W. Hu2 (1.Chang Gung Univ.(Taiwan), 2.Episil-Precision Inc(Taiwan))