The Japan Society of Applied Physics

3:00 PM - 5:00 PM

[PS-8-09] The Properties of the InxGa1-xSb Epilayer Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using the Interfacial Misfit Dislocation Technique

S. Huynh1, Q. Luc1, M. Ha1, H. Do1, H. Yu1, E. Chang1 (1.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-8-09