3:00 PM - 5:00 PM
[PS-8-09] The Properties of the InxGa1-xSb Epilayer Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using the Interfacial Misfit Dislocation Technique
○S. Huynh1, Q. Luc1, M. Ha1, H. Do1, H. Yu1, E. Chang1
(1.NCTU(Taiwan))
https://doi.org/10.7567/SSDM.2016.PS-8-09