The Japan Society of Applied Physics

15:00 〜 17:00

[PS-8-10] The Growth of InxGa1-xSb Epilayer on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using an Interfacial Misfit Dislocation GaSb Buffer Layer

S. Huynh1, M. Ha1, Q. Luc1, H. Do1, C. Hsiao2, C. Chang1,J. Lin1, H. Yu1, E. Chang1 (1.NCTU(Taiwan), 2.National Cheng Kung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-8-10