The Japan Society of Applied Physics

11:24 AM - 11:27 AM

[PS-8-09] The Properties of the InxGa1-xSb Epilayer Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using the Interfacial Misfit Dislocation Technique

S. Huynh1, Q. Luc1, M. Ha1, H. Do1, H. Yu1, E. Chang1 (1.NCTU(Taiwan))