The Japan Society of Applied Physics

15:00 〜 17:00

[PS-9-12(Late News)] Gate-stack Engineering of Self-organized Nanospherical Ge-gate/SiO2/Si1-xGex-channel on Si (100) and Si (110) for Ge MOS Devices

P. H. Liao1, C. W. Tien2, K. P. Peng2, H. C. Lin2, T. George1,P. W. Li1,2 (1.National Central Univ.(Taiwan), 2.NCTU(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-9-12L